Lithographic apparatus and device manufacturing method

ABSTRACT

In an immersion lithographic apparatus, a final element is disclosed having, on a surface nearest the substrate, a layer bonded to the surface and having an edge barrier, of the same material as the layer, extending from the layer away from the substrate to shield the final element from a liquid. In an embodiment, the final element is attached to the apparatus via the layer and/or edge barrier, which may be made of a material with a coefficient of thermal expansion lower than the coefficient of thermal expansion of the final element.

This is a continuation of co-pending U.S. patent application Ser. No.11/022,939, filed Dec. 28, 2004, now U.S. Pat. No. 7,405,805, the entirecontents of which is hereby incorporated by reference.

FIELD

The present invention relates to a lithographic apparatus and a methodfor manufacturing a device.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.comprising part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Known lithographic apparatusinclude so-called steppers, in which each target portion is irradiatedby exposing an entire pattern onto the target portion at one time, andso-called scanners, in which each target portion is irradiated byscanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

It has been proposed to immerse the substrate in the lithographicprojection apparatus in a liquid having a relatively high refractiveindex, e.g. water, so as to fill a space between the final element ofthe projection system and the substrate. The point of this is to enableimaging of smaller features since the exposure radiation will have ashorter wavelength in the liquid. (The effect of the liquid may also beregarded as increasing the effective NA of the system and alsoincreasing the depth of focus.) Other immersion liquids have beenproposed, including water with solid particles (e.g. quartz) suspendedtherein. Water or an aqueous solution has been proposed for 248 and 193nm projection radiation and perfluourohydrocarbons for 157 nm projectionradiation.

However, submersing the substrate or substrate and substrate table in abath of liquid (see for example U.S. Pat. No. 4,509,852, herebyincorporated in its entirety by reference) means that there is a largebody of liquid that must be accelerated during a scanning exposure. Thisrequires additional or more powerful motors and turbulence in the liquidmay lead to undesirable and unpredictable effects.

One of the solutions proposed is for a liquid supply system to provideliquid on only a localized area of the substrate and in between thefinal element of the projection system and the substrate (the substrategenerally has a larger surface area than the final element of theprojection system). One way which has been proposed to arrange for thisis disclosed in WO 99/49504, hereby incorporated in its entirety byreference. As illustrated in FIGS. 2 and 3, liquid is supplied by atleast one inlet IN onto the substrate, preferably along the direction ofmovement of the substrate relative to the final element, and is removedby at least one outlet OUT after having passed under the projectionsystem. That is, as the substrate is scanned beneath the element in a −Xdirection, liquid is supplied at the +X side of the element and taken upat the −X side. FIG. 2 shows the arrangement schematically in whichliquid is supplied via inlet IN and is taken up on the other side of theelement by outlet OUT which is connected to a low pressure source. Inthe illustration of FIG. 2 the liquid is supplied along the direction ofmovement of the substrate relative to the final element, though thisdoes not need to be the case. Various orientations and numbers of in-and out-lets positioned around the final element are possible, oneexample is illustrated in FIG. 3 in which four sets of an inlet with anoutlet on either side are provided in a regular pattern around the finalelement.

SUMMARY

Accordingly, it would be advantageous, for example, to provide alithographic projection apparatus in which degradation of components,because of contact with immersion liquid, is reduced.

According to an aspect of the invention, there is provided alithographic projection apparatus, comprising:

a projection system configured to project a patterned beam of radiationonto a substrate, the projection system comprising a final elementhaving, on a surface nearest the substrate, a layer bonded to thesurface and comprising an edge barrier, of the same material as thelayer, extending from the layer away from the substrate to shield thefinal element from a liquid; and

a liquid supply system configured to at least partly fill a spacebetween a final element of the projection system and the substrate witha liquid.

According to an aspect of the invention, there is provided alithographic projection apparatus, comprising:

a projection system configured to project a patterned beam of radiationonto a substrate, the projection system comprising a final elementhaving a layer on a surface nearest the substrate, the final elementbeing attached to the apparatus through the layer; and

a liquid supply system configured to at least partly fill a spacebetween the final element of the projection system and the substratewith a liquid.

According to an aspect of the invention, there is provided a devicemanufacturing method, comprising:

projecting a patterned beam of radiation onto a substrate through aliquid provided in a space between a final element of a projectionsystem and the substrate, wherein the final element has on a surfacenearest the substrate a layer through which the final element issupported.

According to an aspect of the invention, there is provided a devicemanufacturing method, comprising:

projecting a patterned beam of radiation onto a substrate through aliquid provided in a space between a final element of a projectionsystem and the substrate,

wherein a surface of the final element nearest the substrate has a layerbonded to it and an edge barrier of the same material as the layerextends from the layer away from the substrate to shield the finalelement from the liquid.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts a lithographic apparatus according to an embodiment ofthe invention;

FIGS. 2 and 3 depict a liquid supply system for use in a lithographicprojection apparatus;

FIG. 4 depicts another liquid supply system for use in a lithographicprojection apparatus;

FIG. 5 depicts a liquid supply system according to an embodiment of theinvention; and

FIG. 6 depicts a layer and edge barrier applied to a final element of aprojection system according to an embodiment of the invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to oneembodiment of the invention. The apparatus comprises:

an illumination system (illuminator) IL configured to condition aradiation beam B (e.g. UV radiation or DUV radiation).

a support structure (e.g. a mask table) MT constructed to support apatterning device (e.g. a mask) MA and connected to a first positionerPM configured to accurately position the patterning device in accordancewith certain parameters;

a substrate table (e.g. a wafer table) WT constructed to hold asubstrate (e.g. a resist-coated wafer) W and connected to a secondpositioner PW configured to accurately position the substrate inaccordance with certain parameters; and

a projection system (e.g. a refractive projection lens system) PSconfigured to project a pattern imparted to the radiation beam B bypatterning device MA onto a target portion C (e.g. comprising one ormore dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The support structure supports, i.e. bears the weight of, the patterningdevice. It holds the patterning device in a manner that depends on theorientation of the patterning device, the design of the lithographicapparatus, and other conditions, such as for example whether or not thepatterning device is held in a vacuum environment. The support structurecan use mechanical, vacuum, electrostatic or other clamping techniquesto hold the patterning device. The support structure may be a frame or atable, for example, which may be fixed or movable as required. Thesupport structure may ensure that the patterning device is at a desiredposition, for example with respect to the projection system. Any use ofthe terms “reticle” or “mask” herein may be considered synonymous withthe more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables (and/or two or more mask tables). In such“multiple stage” machines the additional tables may be used in parallel,or preparatory steps may be carried out on one or more tables while oneor more other tables are being used for exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD for adjusting the angularintensity distribution of the radiation beam. Generally, at least theouter and/or inner radial extent (commonly referred to as σ-outer andσ-inner, respectively) of the intensity distribution in a pupil plane ofthe illuminator can be adjusted. In addition, the illuminator IL maycomprise various other components, such as an integrator IN and acondenser CO. The illuminator may be used to condition the radiationbeam, to have a desired uniformity and intensity distribution in itscross-section.

The radiation beam B is incident on the patterning device (e.g., maskMA), which is held on the support structure (e.g., mask table MT), andis patterned by the patterning device. Having traversed the mask MA, theradiation beam B passes through the projection system PS, which focusesthe beam onto a target portion C of the substrate W. With the aid of thesecond positioner PW and position sensor IF (e.g. an interferometricdevice, linear encoder or capacitive sensor), the substrate table WT canbe moved accurately, e.g. so as to position different target portions Cin the path of the radiation beam B. Similarly, the first positioner PMand another position sensor (which is not explicitly depicted in FIG. 1)can be used to accurately position the mask MA with respect to the pathof the radiation beam B, e.g. after mechanical retrieval from a masklibrary, or during a scan. In general, movement of the mask table MT maybe realized with the aid of a long-stroke module (coarse positioning)and a short-stroke module (fine positioning), which form part of thefirst positioner PM. Similarly, movement of the substrate table WT maybe realized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the mask table MT may be connected to ashort-stroke actuator only, or may be fixed. Mask MA and substrate W maybe aligned using mask alignment marks M1, M2 and substrate alignmentmarks P1, P2. Although the substrate alignment marks as illustratedoccupy dedicated target portions, they may be located in spaces betweentarget portions (these are known as scribe-lane alignment marks).Similarly, in situations in which more than one die is provided on themask MA, the mask alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the mask table MT and the substrate table WT are keptessentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT is then shifted in the Xand/or Y direction so that a different target portion C can be exposed.In step mode, the maximum size of the exposure field limits the size ofthe target portion C imaged in a single static exposure.

2. In scan mode, the mask table MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the masktable MT may be determined by the (de-)magnification and image reversalcharacteristics of the projection system PS. In scan mode, the maximumsize of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the mask table MT is kept essentially stationaryholding a programmable patterning device, and the substrate table WT ismoved or scanned while a pattern imparted to the radiation beam isprojected onto a target portion C. In this mode, generally a pulsedradiation source is employed and the programmable patterning device isupdated as required after each movement of the substrate table WT or inbetween successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

A further immersion lithography solution with a localized liquid supplysystem is shown in FIG. 4. Liquid is supplied by two groove inlets IN oneither side of the projection system PL and is removed by a plurality ofdiscrete outlets OUT arranged radially outwardly of the inlets IN. Theinlets IN and OUT can be arranged in a plate with a hole in its centerand through which the projection beam is projected. Liquid is suppliedby one groove inlet IN on one side of the projection system PL andremoved by a plurality of discrete outlets OUT on the other side of theprojection system PL, causing a flow of a thin film of liquid betweenthe projection system PL and the substrate W. The choice of whichcombination of inlet IN and outlets OUT to use can depend on thedirection of movement of the substrate W (the other combination of inletIN and outlets OUT being inactive).

Another immersion lithography solution with a localized liquid supplysystem solution which has been proposed is to provide the liquid supplysystem with a liquid confinement structure which extends along at leasta part of a boundary of the space between the final element of theprojection system and the substrate table. The liquid confinementstructure is substantially stationary relative to the projection systemin the XY plane though there may be some relative movement in the Zdirection (in the direction of the optical axis). A seal is formedbetween the liquid confinement structure and the surface of thesubstrate. In an embodiment, the seal is a contactless seal such as agas seal. Such a system with a gas seal is disclosed in U.S. patentapplication Ser. No. 10/705,783, hereby incorporated in its entirety byreference.

FIG. 5 shows a liquid supply system comprising a liquid confinementstructure (sometimes referred to as an immersion hood or showerhead)according to an embodiment of the invention. In particular, FIG. 5depicts an arrangement of a reservoir 10, which forms a contactless sealto the substrate around the image field of the projection system so thatliquid is confined to fill a space between the substrate's primarysurface, which faces the projection system PL, and the final element(e.g. an ‘abschlussplatte’ which seals the projection system, or thefinal optical element of the projection system) of the projection systemPL. A liquid confinement structure 12 positioned below and surroundingthe final element of the projection system PL forms the reservoir. Thus,the liquid supply system provides liquid on only a localized area of thesubstrate. The liquid confinement structure 12 forms part of the liquidsupply system configured to fill a space between the final element ofthe projection system and the substrate W (or substrate table WT) with aliquid. Liquid is brought into the space below the projection system andwithin the liquid confinement structure 12. The liquid confinementstructure 12 extends a little above the final element of the projectionsystem and the liquid level rises above the final element so that abuffer of liquid is provided. The liquid confinement structure 12 has aninner periphery that at the upper end preferably closely conforms to theshape of the projection system or the final element thereof and may,e.g., be round. At the bottom, the inner periphery closely conforms tothe shape of the image field, e.g., rectangular though this need not bethe case. The patterned beam passes through this aperture.

The liquid is confined in the reservoir by a gas seal 16 between thebottom of the liquid confinement structure 12 and the surface of thesubstrate W. The gas seal is formed by gas, e.g. air, synthetic air, N₂or an inert gas, provided under pressure via inlet 15 to the gap betweenliquid confinement structure 12 and substrate and extracted via outlet14. The overpressure on the gas inlet 15, vacuum level on the outlet 14and geometry of the gap are arranged so that there is a high-velocitygas flow inwards that confines the liquid. It will be understood by theperson skilled in the art that other types of seal could be used tocontain the liquid such as simply an outlet to remove liquid and/or gas.As with any seal, some liquid is likely to escape, for example up theoutlet 14.

FIGS. 2, 3 and 4 also depict a liquid reservoir defined by inlet(s) IN,outlet(s) OUT, the substrate W and the final element of projection lensPL. Like the liquid supply system of FIG. 5, the liquid supply systemsillustrated in FIGS. 2, 3 and 4, comprising inlet(s) IN and outlet(s)OUT, supply liquid to a space between the final element of theprojection system and a localized area of the primary surface of thesubstrate.

Both of the liquid supply systems of FIGS. 2, 3 and 4 as well as othersolutions, such as a bath in which the substrate W or whole substratetable WT is submerged, may be used an one or more embodiments of theinvention described below.

FIG. 6 illustrates in detail the final element 20 of the projectionsystem PL according to an embodiment of the invention. In the embodimentillustrated in FIG. 6, a final optical element 20 of the projectionsystem is present which is the last lens element of the projectionsystem PL which shapes and/or directs the patterned beam.

In an embodiment, a material transmissive of radiation at 193 nm isquartz, unless the intensity of the radiation will result in significantcompaction effects. The intensity of the radiation of the patterned beamis highest at the final element, which also tends to be the smallest, sothat this element is likely to suffer from compaction if made fromquartz. Accordingly, in an embodiment, the material for the last elementmay instead be CaF₂ since it does not suffer from compaction at 193 nm.The use of CaF₂ is even more applicable for 157 nm radiation as quartzis not transmissive of radiation having this wavelength. However, CaF₂may dissolve or react with immersion liquid 11 used in an immersionlithographic apparatus.

Several ways of protecting the final element 20 of the projection systemare disclosed in European Patent Application No. 03257400.6, herebyincorporated in its entirety by reference.

Another concern with using CaF₂ for the final element of the projectionsystem PL is that CaF₂ has a very high thermal expansion coefficient (40times larger than that of fused silica) and may therefore be difficultto mount in the projection system without inducing large thermalstresses and deformations if the mounting materials are different. Inthe first order, these stresses and deformations change linearly withthe difference in expansion coefficients. Thus, mounting a CaF₂ opticalelement may be problematic, particularly for immersion lithographicapparatus, where the positional requirement of the final lens elementcan be a factor of 2 to 10 times greater than that for non-immersionlithographic apparatus.

Referring to FIG. 6, a final element of the projection system accordingto an embodiment of the invention is depicted. The bottom surface 25 ofthe final element (e.g., a lens) 20 of the projection system nearest tothe substrate is protected by a fused silica layer 40 which is providedon the final element 20. This layer may have a thickness in the range of50 μm to 5 mm and may be contact bonded or glue bonded to the finalelement 20. In contact bonding, no glue is used—the bonding surfaces aresmooth and clean enough to directly bond together. After bonding to thefinal element, the fused silica layer 40 may be ground and polished tothe desired thickness, avoiding difficulties inherent in handling a verythin layer of fused silica. Thus, in an embodiment, the layer 40 andfinal element 20 are bonded together and the final element 20 is notmerely coated.

Although this form of bonding can provide an exceptionally strong bondwhere dissimilar materials, such as CaF₂ and fused silica, are bonded,temperature changes and thermal gradients may cause the bond to“breathe”—differential thermal expansion or contraction of the twomaterials causing them to separate until the stress is relieved.Although the bond usually reforms very quickly in the case of thermalseparation, if this occurs when the final element is in contact with aliquid, e.g. during polishing or grinding of the layer 40 or during useof the immersion lithographic apparatus, liquid may be drawn into thegap.

In order to protect the bond between the final element 20 and the layer40, an edge barrier 60 of the same material as the layer 40 andextending from the layer 40 away from the substrate (towards theremainder of the projection system PL) completes the barrier around thefinal element 20 such that the final element 20 is shielded from theliquid 11.

The edge barrier 60 is attached around the edge 45 of the layer 40. Asillustrated, the edge barrier 60 is attached adjacent an edge 45 of theplate 40 which extends beyond the edge of the bottom surface 25 of thefinal element 20. Other arrangements are possible, for example bybonding the edge barrier 60 to the edge surface of the layer 40 ratherthan to the top surface of the plate 40. In an embodiment, the bondbetween the edge barrier 60 and the layer 40 is a fusion bond. PCTPatent Application No. PCT/EP04/013310, hereby incorporated in itsentirety by reference, describes such bonding techniques in detail. Inan embodiment, the edge barrier 60 is in the form of a truncated cone.However, the edge barrier 60 may have any shape so long as it creates acavity which can accommodate the final element 20.

The final element 20 may well have sides that overlap the bottom surfaceof the final element 20 such that, in an embodiment, the layer 40overhangs the bottom surface of the final element 20 so that the edgebarrier 60 can be attached to the top of the surface of the layer 40. Inan embodiment, a gap is left between the edge barrier 60 and the finalelement 20 though this need not be the case.

As is shown in FIG. 6, the final element 20 may be mounted to mounts 80of the projection system PS body through the edge barrier 60 and throughthe layer 40. This is advantageous because temperature and mountinginduced stresses and deformations may be reduced significantly becausethe edge barrier 60 acts as a decoupling between the mounts 80 and thefinal element 20. Alternatively, the final element 20 may be mounted tothe mounts 80 directly through the layer 40. Measurement systems orsensors configured to measure the position of the final element 20 mayalso be attached to the layer 40 or edge barrier 60. The attachment tothe projection system or of the sensors is achievable by conventionalmeans.

Although an embodiment of the invention has been described with thelayer 40 and the edge barrier 60 comprising fused silica, anyappropriate material may be used for the layer 40 and/or the edgebarrier 60. In an embodiment, the material used for the layer 40 and/orthe edge barrier 60 is resistant to attack by the immersion liquid,which may be a liquid other than water, and has a coefficient of thermalexpansion lower than that of the material of the final element 20, whichmay be a material other than CaF₂. In an embodiment, the coefficient ofthermal expansion is at least 2 times, 5 times, 10 times or 20 timeslower than that of the material of the final element. The final element20 may be made of any appropriate material.

In European Patent Application No. 03257072.3, the idea of a twin ordual stage immersion lithography apparatus is disclosed. Such anapparatus is provided with two tables for supporting a substrate.Leveling measurements are carried out with a table at a first position,without immersion liquid, and exposure is carried out with a table at asecond position, where immersion liquid is present. Alternatively, theapparatus has only one table.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithography atopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g. having a wavelength in therange of 5-20 nm), as well as particle beams, such as ion beams orelectron beams.

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

One or more embodiments of the invention may be applied to any immersionlithography apparatus, such as those types mentioned above, and whetherthe immersion liquid is provided in the form of a bath or only on alocalized surface area of the substrate. A liquid supply system is anymechanism that provides a liquid to a space between the projectionsystem and the substrate and/or substrate table. It may comprise anycombination of one or more structures, one or more liquid inlets, one ormore gas inlets, one or more gas outlets, and/or one or more liquidoutlets, the combination providing and confining the liquid to thespace. In an embodiment, a surface of the space may be limited to aportion of the substrate and/or substrate table, a surface of the spacemay completely cover a surface of the substrate and/or substrate table,or the space may envelop the substrate and/or substrate table.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

1. A lithographic projection apparatus, comprising: a projection systemconfigured to project a patterned beam of radiation onto a substrate,the projection system comprising a final element having, on a surfacenearest the substrate, a layer bonded to the surface and comprising anedge barrier, of the same material as the layer, extending away from thelayer to shield the final element from a liquid, wherein the edgebarrier does not directly contact the final element; and a liquid supplysystem configured to at least partly fill a space between a finalelement of the projection system and the substrate with a liquid.
 2. Theapparatus of claim 1, wherein the edge barrier is fusion bonded to thelayer.
 3. The apparatus of claim 1, wherein the final element is mountedto the apparatus by connection through the edge barrier and/or layer. 4.The apparatus of claim 1, wherein the layer is a plate.
 5. The apparatusof claim 1, wherein the layer and edge barrier comprise fused silica. 6.The apparatus of claim 1, wherein the final element comprises CaF.sub.2.7. The apparatus of claim 1, wherein the edge barrier is in the shape ofa truncated cone.
 8. The apparatus of claim 1, wherein the layer iscontact bonded to the surface.
 9. The apparatus of claim 1, wherein thelayer is substantially insoluble in the liquid.
 10. The apparatus ofclaim 1, wherein the layer has a coefficient of thermal expansion lowerthan the coefficient of thermal expansion of the final element.
 11. Adevice manufacturing method, comprising: projecting a patterned beam ofradiation onto a substrate through a liquid provided in a space betweena final element of a projection system and the substrate, wherein asurface of the final element nearest the substrate has a layer bonded toit and an edge barrier of the same material as the layer extends awayfrom the layer to shield the final element from the liquid, wherein theedge barrier does not directly contact the final element.
 12. The methodof claim 11, wherein the layer is substantially insoluble in the liquid.13. The method of claim 11, wherein the layer has a coefficient ofthermal expansion lower than the coefficient of thermal expansion of thefinal element.
 14. A device manufacturing method, comprising: projectinga patterned beam of radiation onto a substrate through a liquid providedin a space between a final element of a projection system and thesubstrate, wherein the final element has on a surface nearest thesubstrate a layer through which the final element is supported, and anedge barrier, not directly in contact with the final element, shieldsthe final element from the liquid.
 15. The method of claim 14, whereinthe layer is substantially insoluble in the liquid.
 16. The method ofclaim 14, wherein the layer has a coefficient of thermal expansion lowerthan the coefficient of thermal expansion of the final element.